Endurance properties of ferroelectric PZT thin films

Reza Moazzami; Chen-Ming Hu; William H. Shepherd

doi:10.1109/IEDM.1990.237143

Endurance properties of ferroelectric PZT thin films

Reza Moazzami^*, Chen-Ming Hu, William H. Shepherd

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.

Original language	English
Pages (from-to)	417-420
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1990.237143
State	Published - 1 Dec 1990
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: 9 Dec 1990 → 12 Dec 1990

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title = "Endurance properties of ferroelectric PZT thin films",

abstract = "The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.",

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AU - Hu, Chen-Ming

AU - Shepherd, William H.

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N2 - The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.

AB - The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.

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U2 - 10.1109/IEDM.1990.237143

DO - 10.1109/IEDM.1990.237143

M3 - Conference article

AN - SCOPUS:0025575598

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 9 December 1990 through 12 December 1990

ER -

Endurance properties of ferroelectric PZT thin films

Abstract

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