Encapsulation of silver via nitridation of Ag/Ti bilayer structures

Y. L. Zou*, T. L. Alford, D. Adams, T. Laursen, King-Ning Tu, R. Morton, S. S. Lau

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of approximately 2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.

Original languageEnglish
Pages (from-to)355-360
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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