Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes

Rong Bin Xu, Huan Xu, Yang Mei, Xiao Ling Shi, Lei Ying Ying, Zhi Wei Zheng, Hao Long, Zhi Ren Qiu, Bao Ping Zhang*, Jian Ping Liu*, Hao Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We fabricated GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) by inserting InGaN quantum well (QW) active region between two dielectric distributed Bragg reflectors (DBRs). Due to the different gain enhancement factors in a single device, multi-longitudinal modes were observed and tuned with changing the injection current density: pure-blue (PB) at low current density, violet-blue (VB) at intermediate current density, and PB again at high current density. The variation of emission spectra is explained by the competition between band-filling effect and self-heating effect.

Original languageEnglish
Article number116717
JournalJournal of Luminescence
Volume216
DOIs
StatePublished - Dec 2019

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