Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

Ming Chien Tsai*, Yi Wei Lin, Hao I. Yang, Ming Hsien Tu, Wei Chiang Shih, Nan Chun Lien, Kuen Di Lee, Shyh-Jye Jou, Ching Te Chuang, Wei Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ measurement/characterization capability of cell transistor degradation induced by bias temperature instability. The viability of the embedded ring oscillator odometer and the impact of bias temperature instability are demonstrated in 55nm standard performance CMOS technology.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs
StatePublished - 25 Jul 2012
Event2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, Taiwan
Duration: 23 Apr 201225 Apr 2012

Publication series

Name2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Conference

Conference2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
CountryTaiwan
CityHsinchu
Period23/04/1225/04/12

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