Abstract
An additional high-voltage pad is generally applied for one-time-programming (OTP) memory product applications. This may increase the complexity of input/output (I/O) pad arrangement and the area penalty. In this paper, a novel approach of I/O circuit embedded with the power-switch function is proposed for multifunction integrations in one I/O pad. The capabilities of high-voltage programming, I/O signal handling, electrostatic discharge protection and latch-up prevention for this novel circuit are well examined from silicon verifications.
Original language | English |
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Article number | 5712201 |
Pages (from-to) | 746-750 |
Number of pages | 5 |
Journal | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Volume | 20 |
Issue number | 4 |
DOIs | |
State | Published - 1 Apr 2012 |
Keywords
- Electrostatic discharge (ESD)
- Neobit
- one-time programming (OTP)