An additional high-voltage pad is generally applied for one-time-programming (OTP) memory product applications. This may increase the complexity of input/output (I/O) pad arrangement and the area penalty. In this paper, a novel approach of I/O circuit embedded with the power-switch function is proposed for multifunction integrations in one I/O pad. The capabilities of high-voltage programming, I/O signal handling, electrostatic discharge protection and latch-up prevention for this novel circuit are well examined from silicon verifications.
|Number of pages||5|
|Journal||IEEE Transactions on Very Large Scale Integration (VLSI) Systems|
|State||Published - 1 Apr 2012|
- Electrostatic discharge (ESD)
- one-time programming (OTP)