@inproceedings{b646f32785f74477b29be9dd404b3e6b,
title = "Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell",
abstract = "The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS{\textregistered} and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.",
keywords = "Gradient Indium content, InN materials, Photovoltaic cells",
author = "Hsu, {Lung Hsing} and Chien-Chung Lin and Tan, {Ming Hsuan} and Yeh, {Yun Ling} and Lin, {Da Wei} and Han, {Hau Vei} and Hao-Chung Kuo",
year = "2013",
month = jan,
day = "1",
doi = "10.1109/PVSC.2013.6744965",
language = "English",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2428--2431",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
note = "null ; Conference date: 16-06-2013 Through 21-06-2013",
}