Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Lung Hsing Hsu; Chien-Chung Lin; Ming Hsuan Tan; Yun Ling Yeh; Da Wei Lin; Hau Vei Han; Hao-Chung Kuo

doi:10.1109/PVSC.2013.6744965

Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Lung Hsing Hsu, Chien-Chung Lin, Ming Hsuan Tan, Yun Ling Yeh, Da Wei Lin, Hau Vei Han, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2428-2431
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744965
State	Published - 1 Jan 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

Keywords

Gradient Indium content
InN materials
Photovoltaic cells

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1109/PVSC.2013.6744965

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Hsu, L. H., Lin, C-C., Tan, M. H., Yeh, Y. L., Lin, D. W., Han, H. V., & Kuo, H-C. (2013). Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2428-2431). [6744965] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744965

Hsu, Lung Hsing ; Lin, Chien-Chung ; Tan, Ming Hsuan ; Yeh, Yun Ling ; Lin, Da Wei ; Han, Hau Vei ; Kuo, Hao-Chung. / Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2428-2431 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell",

abstract = "The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS{\textregistered} and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.",

keywords = "Gradient Indium content, InN materials, Photovoltaic cells",

author = "Hsu, {Lung Hsing} and Chien-Chung Lin and Tan, {Ming Hsuan} and Yeh, {Yun Ling} and Lin, {Da Wei} and Han, {Hau Vei} and Hao-Chung Kuo",

year = "2013",

month = jan,

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doi = "10.1109/PVSC.2013.6744965",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Hsu, LH, Lin, C-C, Tan, MH, Yeh, YL, Lin, DW, Han, HV & Kuo, H-C 2013, Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744965, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2428-2431, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744965

Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell. / Hsu, Lung Hsing; Lin, Chien-Chung; Tan, Ming Hsuan; Yeh, Yun Ling; Lin, Da Wei; Han, Hau Vei; Kuo, Hao-Chung.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2428-2431 6744965 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

AU - Hsu, Lung Hsing

AU - Lin, Chien-Chung

AU - Tan, Ming Hsuan

AU - Yeh, Yun Ling

AU - Lin, Da Wei

AU - Han, Hau Vei

AU - Kuo, Hao-Chung

PY - 2013/1/1

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N2 - The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

AB - The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

KW - Gradient Indium content

KW - InN materials

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Hsu LH, Lin C-C, Tan MH, Yeh YL, Lin DW, Han HV et al. Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2428-2431. 6744965. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744965

Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Abstract

Publication series

Conference

Keywords

UN SDGs

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