Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Lung Hsing Hsu, Chien-Chung Lin, Ming Hsuan Tan, Yun Ling Yeh, Da Wei Lin, Hau Vei Han, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2428-2431
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 1 Jan 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/06/1321/06/13

Keywords

  • Gradient Indium content
  • InN materials
  • Photovoltaic cells

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