Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors

Wei Yuan Chang, Wei Zhong Chen, Hung Tse Lee, Jihperng Leu*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Low-k, carbon-rich SiC x N y films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiC x N y films with carbon bridges, namely ethylene bridges (Si-CH2-CH2-Si) and methylene bridges (Si-CH2-Si), which are readily formed and embedded with the Si-N(-C) matrix. A SiC x N y film of low k = 3.2 is achieved by successful incorporation of ethylene bridge embedded within the Si-N(-C x) network by using a linear silazane precursor. Also, for these silazanes-deposited SiC x N y films at a fixed dielectric constant below 4.2, cyclic silazane, VSZ (1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane) produces films of higher film density and modulus, compared to those by a linear silazane precursor.

Original languageEnglish
Article numberSHHB01
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSH
DOIs
StatePublished - 1 Jan 2019

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