Ellipsometric study of the optical properties of InGaAsN layers

Pei-Wen Li, Huei Chen Guang, Nein Yi Li

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Abstract

We report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of InxGa1-xAs1-yNy increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in InxGa1-xAs1-yNy with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E1 as a function of N composition for In0.3Ga0.7As1-yNy epilayers was also examined based on the second-derivative spectra of the dielectric function.

Original languageEnglish
Pages (from-to)L898-L900
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number9 A/B
DOIs
StatePublished - 15 Sep 2000

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