Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

Ting Chang Chang*, Po-Tsun Liu, Tsung Ming Tsai, Fon Shan Yeh, Tseung-Yuen Tseng, Ming Shih Tsai, Ben Chang Chen, Ya Liang Yang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.

Original languageEnglish
Pages (from-to)3143-3146
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number5 A
DOIs
StatePublished - 1 May 2001

Keywords

  • CMP
  • Dielectric degradation
  • HSQ
  • Low k
  • NH plasma treatment
  • Recover

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