Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang*, Po-Tsun Liu, Y. S. Mor, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations

Abstract

O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.

Original languageEnglish
Pages (from-to)1561-1566
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - 1 Jul 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 6 Jan 200210 Jan 2002

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