@inproceedings{d37af1b0935049c893964e28e600cbe1,
title = "Electrostatic Integrity in Negative-Capacitance FETs - A Subthreshold Modeling Approach",
abstract = "Using an analytical subthreshold potential model, this paper shows that the negative-capacitance FinFET (NC-FinFET) inherently possesses a superior electrostatic integrity than the baseline FinFET. Taking into account the spacer induced distributed charges in our subthreshold model, we demonstrate that an adequate spacer design can be utilized to further enhance the NC effect and the electrostatic integrity for NC-FinFETs. This may serve as a way to extend the FinFET scaling.",
author = "Pin Su and You, {Wei Xiang}",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993444",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
address = "United States",
note = "null ; Conference date: 07-12-2019 Through 11-12-2019",
}