Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

Wen-Hao Chang*, Hsiang Yu Chen, H. S. Chang, W. Y. Chen, T. M. Hsu, T. P. Hsieh, J. I. Chyi, N. T. Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

Original languageEnglish
Article number131917
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - 23 Mar 2005

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