Electroreflectance of surface-intrinsic- n+-type doped GaAs

D. P. Wang*, K. M. Huang, T. L. Shen, Kai-Feng Huang, T. C. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The electroreflectance spectra of surface-intrinsic- n+-type-doped GaAs were measured at various bias voltages (Vbias). Results revealed many Franz-Keldysh oscillations (FKOs) above the band-gap energy, which have been attributed to a uniform electric field (F) in the undoped layer below the surface. However, there has been no other evidence for the uniformity of F in the undoped layer. Since it is known that F can be deduced from the periods of the FKOs, the relations between F and Vbias can, thereby, be obtained. The nearly linear relation, thus found, confirms the existence of a nearly uniform field in the undoped layer. From the plot of F against Vbias, the values of the thickness of the undoped layer and the barrier height can also be evaluated.

Original languageEnglish
Pages (from-to)3089-3091
Number of pages3
JournalJournal of Applied Physics
Volume82
Issue number6
DOIs
StatePublished - 15 Sep 1997

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