Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells

Chien Rong Lu, Shry-Fong Lou, Hung-Hsiang Cheng, Chien-Ping Lee, Fu Yi Tsai

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Abstract

The electrooptical properties of (100) and (111)B InGaAs/GaAs strained single quantum wells have been studied by the photoreflectance spectroscopy at various temperatures and under different biases. There is a Si delta-doping sheet under the GaAs surface to screen the surface built-in electric field from the quantum well. The spectral features consist of the excitonic interband transitions in the quantum well, and the Franz-Keldysh oscillations from the band edge transitions of the GaAs barrier near the surface. The piezoelectric field tilts the (111)B single quantum well toward the Si delta-doping and causes subband filling by the electrons from the delta-doping centers. With a proper external bias to repel electrons from the tilted quantum well, the excitonic interband transition in the (111)B system is enhanced.
Original languageEnglish
Pages (from-to)351-352
Number of pages2
JournalJapanese Journal of Applied Physics
Volume39
Issue number1
StatePublished - 2000

Keywords

  • photoreflectance; strained single quantum wells; piezoelectric field; Franz-Keldysh oscillations

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    Lu, C. R., Lou, S-F., Cheng, H-H., Lee, C-P., & Tsai, F. Y. (2000). Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells. Japanese Journal of Applied Physics, 39(1), 351-352.