Electrooptical properties of GaNAs/GaAs multiple quantum well structures

Jia Ren Lee, Yo Yu Chen, Chien Rong Lu*, Wei-I Lee, Shih Chang Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The electrooptical properties of the GaNAs/GaAs multiple quantum well structures have been studied using the photoreflectance spectroscopy from 20 K to room temperature. Above the band gap energy of GaAs, Franz-Keldysh oscillations were observed. The period of the Franz-Keldysh oscillations decreased slightly with decreasing temperature, and indicated that the corresponding space charge distribution varied slowly with temperature. The modulated quantum well transition features were observed below the band gap energy of GaAs. A matrix transfer algorithm was used to calculate the quantum well subband energies numerically. The band gap energy and the electron effective mass of the GaNAs/GaAs system were adjusted to obtain the subband energies to best fit the observed quantum well transition energies.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume100
Issue number3
DOIs
StatePublished - 25 Jul 2003

Keywords

  • GaNAs/GaAs
  • Photoreflectance
  • Quantum well

Fingerprint Dive into the research topics of 'Electrooptical properties of GaNAs/GaAs multiple quantum well structures'. Together they form a unique fingerprint.

Cite this