Electronic trap characterization of the Sc2O3La 2O3 high- κ gate stack by scanning tunneling microscopy

Y. C. Ong*, D. S. Ang, K. L. Pey, Z. R. Wang, S. J. O'Shea, C. H. Tung, T. Kawanago, K. Kakushima, H. Iwai

*Corresponding author for this work

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Abstract

The tunneling current versus voltage characteristic of the Sc2 O3 La2 O3 Si Ox high- κ gate stack is examined using scanning tunneling microscopy in ultrahigh vacuum. Different measurement bias polarities allow information on the location (i.e., in the high- κ or interfacial Si Ox layer) of the electronic traps to be extracted. Two types of localized leakage sites may be distinguished. Lowering of the electron barrier height and trap-assisted tunneling are proposed as the two leakage mechanisms.

Original languageEnglish
Article number022904
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
StatePublished - 2008

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