Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Andrei A. Gismatulin, Vitalii A. Voronkovskii, Gennadiy N. Kamaev, Yuriy N. Novikov*, Vladimir N. Kruchinin, Grigory K. Krivyakin, Vladimir A. Gritsenko, Igor P. Prosvirin, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

Original languageEnglish
Article number505704
Number of pages10
JournalNanotechnology
Volume31
Issue number50
DOIs
StatePublished - 11 Dec 2020

Keywords

  • memristor
  • SiOx
  • charge transport mechanism
  • electronic structure
  • SILICON-OXIDE
  • RESISTANCE
  • CONDUCTION
  • PHOTOLUMINESCENCE
  • DEVICE
  • RERAM
  • FIELD

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