Electronic structure analysis of silicon nanowires for high conductivity in n- and p-channel nanowire-FET

Yeonghun Lee*, Takahiro Nagata, Kuniyuki Kakushima, Kenji Shiraishi, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

To investigate properties of SiNW-FETs, we have studied the band structures of SiNWs aligned to [100] direction with different diameters. Band structures of SiNWs have been derived by first principle calculation. In SiNWs aligned to [100] direction, effective masses of electron are much smaller than those of hole, while numbers of subbands (quantum channels) near the conduction and valance band edge don't have large difference. Those two factors determine the performance for a transistor. Also, inter-band scattering event is more frequent when intervals of subbands are narrower. Then, a trade-off model of the number of quantum channels has been proposed for an optimum diameter extraction.

Original languageEnglish
Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages1-5
Number of pages5
Edition40
DOIs
StatePublished - 2009
EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number40
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSolid State - General - 214th ECS Meeting/RRiME 2008
CountryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

Fingerprint Dive into the research topics of 'Electronic structure analysis of silicon nanowires for high conductivity in n- and p-channel nanowire-FET'. Together they form a unique fingerprint.

  • Cite this

    Lee, Y., Nagata, T., Kakushima, K., Shiraishi, K., & Iwai, H. (2009). Electronic structure analysis of silicon nanowires for high conductivity in n- and p-channel nanowire-FET. In ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008 (40 ed., pp. 1-5). (ECS Transactions; Vol. 16, No. 40). https://doi.org/10.1149/1.3108347