A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||2001 VLSI Technology Symposium - Kyoto, Japan|
Duration: 12 Jun 2001 → 14 Jun 2001
|Conference||2001 VLSI Technology Symposium|
|Period||12/06/01 → 14/06/01|