Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conference › Paper

15 Scopus citations

Abstract

A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.

Original languageEnglish
Pages51-52
Number of pages2
StatePublished - 1 Jan 2001
Event2001 VLSI Technology Symposium - Kyoto, Japan
Duration: 12 Jun 2001 → 14 Jun 2001

Conference

Conference2001 VLSI Technology Symposium
CountryJapan
CityKyoto
Period12/06/01 → 14/06/01

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    Polishchuk, I., & Hu, C-M. (2001). Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model. 51-52. Paper presented at 2001 VLSI Technology Symposium, Kyoto, Japan.