Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk; Chen-Ming Hu

Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

15 Scopus citations

Abstract

A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Q_inv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO₂ to high-K gate dielectrics.

Original language	English
Pages	51-52
Number of pages	2
State	Published - 1 Jan 2001
Event	2001 VLSI Technology Symposium - Kyoto, Japan Duration: 12 Jun 2001 → 14 Jun 2001

Conference

Conference	2001 VLSI Technology Symposium
Country	Japan
City	Kyoto
Period	12/06/01 → 14/06/01

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title = "Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model",

abstract = "A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.",

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AU - Hu, Chen-Ming

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N2 - A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.

AB - A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.

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Y2 - 12 June 2001 through 14 June 2001

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