This paper presents a method of characterizing the N- sigma (density - ″capture-cross-section″ ) distribution of electron traps in insulators. Requiring only voltage-time measurements made at constant currents, this method has found for oxides grown from poly-Si N reversible reaction sigma ** minus **1**. **1**6. The previously reported absence of saturation electron trapping in these oxides is explained by the high density of traps with small cross-sections. The trap density and cross-section are insensitive to the oxidation condition. The observed trapping characteristics is consistent with this density-cross-section distribution, first order rate dynamics of trapping, and unnoticeable new trap generation by field or current stressing under the test conditions.
|Number of pages||4|
|State||Published - 1 Jan 1979|
|Event||Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA|
Duration: 3 Dec 1979 → 5 Dec 1979
|Conference||Int Electron Devices Meet, 25th, Tech Dig|
|City||Washington, DC, USA|
|Period||3/12/79 → 5/12/79|