Electron transport in the two-dimensional channel material - zinc oxide nanoflake

Jian Jhong Lai, Dunliang Jian, Yen Fu Lin, Ming Ming Ku, Wen-Bin Jian*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

ZnO nanoflakes of 3–5 µm in lateral size and 15–20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalPhysica B: Condensed Matter
Volume532
DOIs
StatePublished - 1 Mar 2018

Keywords

  • Nanoflake
  • Two-dimensional hopping transport
  • Two-dimensional semiconductor
  • Variable range hopping
  • ZnO

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