Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

K. J. Yang*, T. J. King, Chen-Ming Hu, S. Levy, H. N. Al-Shareef

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Effective electron mobility has been studied in MOSFETs with ultrathin silicon nitride/oxynitride stacked gate dielectrics formed by rapid thermal chemical vapor deposition. The mobility in these devices is degraded compared to those with SiO2 (the universal mobility curve). Quantitative analysis suggests that the degradation is due to coulombic scattering from both bulk charges in the dielectric and interface trapped charges. Finally, after investigating the impact of process parameters on mobility, it is concluded that interfacial oxynitride grown at higher pressure in nitric oxide is advantageous for achieving thinner effective stack thicknesses and for preserving electron mobility.

Original languageEnglish
Pages (from-to)149-153
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number1
DOIs
StatePublished - 1 Jan 2003

Keywords

  • Charge scattering
  • Electron mobility
  • RTCVD
  • Silicon nitride

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