Electron field emission properties on UNCD coated Si-nanowires

Yu Fen Tzeng, Yen Chih Lee, Chi Young Lee, Hsin-Tien Chiu, I. Nan Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE-CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE-CVD time interval for coating the UNCD films, attaining small turn-on field (E0 = 6.4 V/μm) and large emission current density (Je = 6.0 mA/cm2 at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E0)SiNWs = 8.6 V/μm and (Je)SiNWs < 0.01 mA/cm2 at the same applied field) and is comparable to those for carbon nanotubes.

Original languageEnglish
Pages (from-to)753-757
Number of pages5
JournalDiamond and Related Materials
Volume17
Issue number4-5
DOIs
StatePublished - 1 Apr 2008

Keywords

  • Electron-field-emission (EFE)
  • Silicon nanowires (SiNWs)
  • Ultra-nano-crystalline diamond (UNCD)

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