Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires

Yu Fen Tzeng, Chi Young Lee*, Hsin-Tien Chiu, Nyan Hwa Tai, I. Nan Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Ultra-nano-crystalline diamond (UNCD) nano-emitters were prepared by coating UNCD films on the tip of silicon nanowire (SiNW) templates by microwave plasma-enhanced chemical vapor deposition process. The electron field emission properties of the UNCD/SiNW nano-emitters varied markedly with the pre-seeding process for the SiNW-templates. The direct ultrasonication process is more efficient in the formation of the diamond nuclei than the carburization/ultrasonication process, yielding UNCD/SiNWs nano-emitters with better electron field emission properties. The electron field emission can be turned on at (E0)UNCD/SiNW4 = 3.75 V/μm, yielding a large electron field emission current density of (Je)UNCD/SiNW4 = 11.22 mA/cm2 at an applied field of 9.75 V/μm. These characteristics are significantly better than those of bare SiNWs or planar UNCD films.

Original languageEnglish
Pages (from-to)1817-1820
Number of pages4
JournalDiamond and Related Materials
Volume17
Issue number7-10
DOIs
StatePublished - 1 Jul 2008

Keywords

  • Electron field emission properties
  • Silicon nanowires (SiNWs)
  • UNCD nano-emitters
  • Ultra-nano-crystalline diamond (UNCD)

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