Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure

Zi Hao Wang, Chih Chiang Yang, Hsin-Chieh Yu*, Hsin Ting Yeh, Yu Ming Peng, Yan Kuin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/μm in the dark and under UV light, and the enhanced field enhancement factors (β) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.

Original languageEnglish
Pages (from-to)251-256
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume65
Issue number1
DOIs
StatePublished - 1 Jan 2018

Keywords

  • Al-doped ZnO nanorods (AZO NRs)
  • Field emission (FE)
  • Hydrothermal

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