Electron energy state spin-splitting in nanoscale InAs/GaAs semiconductor quantum dots and rings

Yi-Ming Li, Hsiao Mei Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We study the effect of spin-orbit interaction for different shape semiconductor quantum nanostructures. The effective one-band Hamiltonian approximation, the position- and energy-dependent quasi-particle effective mass approximation, the finite hard wall confinement potential, and the spin-dependent Ben Daniel-Duke boundary conditions are considered and solved numerically in this work. The spin-orbit interaction which comes from the spin-dependent boundary conditions is characterized for InAs/GaAs quantum dots and quantum rings. We find it can significantly modify the electron energy spectrum for InAs semiconductor quantum dots and quantum rings built in the GaAs matrix. The energy state spin-splitting strongly depends on the geometry of nanostructures. It has an experimentally measurable magnitude for ultra-small quantum dots and quantum rings with non-zero angular momentum.

Original languageEnglish
Title of host publication2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
PublisherIEEE Computer Society
Pages885-888
Number of pages4
ISBN (Electronic)0780379764
DOIs
StatePublished - 2003
Event2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States
Duration: 12 Aug 200314 Aug 2003

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
CountryUnited States
CitySan Francisco
Period12/08/0314/08/03

Keywords

  • Atom optics
  • Boundary conditions
  • Effective mass
  • Electrons
  • Energy states
  • Gallium arsenide
  • Geometry
  • Quantum dots
  • Semiconductor nanostructures
  • US Department of Transportation

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