Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot

Yi-Ming Li*, Jinn Liang Liu, O. Voskoboynikov, C. P. Lee, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Three computational techniques are presented for approximation of the ground state energy and wave function of an electron confined by a disk-shaped InAs quantum dot (QD) embedded in GaAs matrix. The problem is treated with the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and the Ben-Daniel Duke boundary conditions. To solve the three dimensional (3D) Schrödinger equation, we employ (i) the adiabatic approximation, (ii) the adiabatic approximation with averaging, and (iii) full numerical solution. It is shown that the more efficient approximations (i) and (ii) can only be used for relatively large QD sizes. The full numerical method gives qualitative as well as quantitative trends in electronic properties with various parameters.

Original languageEnglish
Pages (from-to)399-404
Number of pages6
JournalComputer Physics Communications
Volume140
Issue number3
DOIs
StatePublished - 1 Nov 2001

Keywords

  • Calculation methods
  • Computer simulation
  • Cylindrical quantum dot
  • Electron states
  • Electronic structure
  • III-V semiconductor

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