Electron-electron interaction and weak-localization effects in Ti-Al alloys

Juhn-Jong Lin*, C. Y. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We have measured the resistivities ρ of Ti1-xAlx alloys (0.00≤x≤0.19) between 4 and 300 K. As the temperature T is lowered to liquid-helium temperatures, a resistivity rise [ρ(T)-ρ(25 K)]/ T ∼-ρ2.5(25 K) is observed. This functional form is due to electron-electron interaction effects in a three-dimensional disordered metal. Particularly, the absolute magnitude of the measured resistivity rise is consistent within ∼25% with the theoretical prediction. At room temperature, the temperature coefficient of resistivity (1/ρ)(dρ/dT) decreases monotonically with increasing x or, equivalently, ρ. The essential characteristics of the variation of (1/ρ)(dρ/dT) with ρ is explained in terms of a theory that considers a competition between the quantum-mechanical effects of weak localization and the classical Boltzmann electron transport.

Original languageEnglish
Pages (from-to)5021-5024
Number of pages4
JournalPhysical Review B
Issue number8
StatePublished - 15 Aug 1993

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