Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots

Wen-Hao Chang*, T. M. Hsu, N. T. Yeh, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We presented capacitance-voltage characteristics and electron-filling reflectance measurements to investigate electron distribution in In0.5Ga0.5As self-assembled quantum dot ensemble. First, the electronic structures of the quantum dots were constructed by capacitance-voltage profile. Coulomb charging effects on the electronic structures were also discussed. Then, the electron level occupations were investigated by the electron-filling reflectance spectra. Due to the correlated carrier transfer among the quantum dots and the n-type GaAs environment, the electron level filling is found to be inhomogeneous near the Fermi level. Finally, electron thermal population in the quantum dot levels was also investigated. The activation energies for the thermal population were found to be close to the level splitting. This means that electrons thermally populated to higher state do not require Coulomb charging energy.

Original languageEnglish
Pages (from-to)13040-13047
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number19
DOIs
StatePublished - 15 Nov 2000

Fingerprint Dive into the research topics of 'Electron distribution and level occupation in an ensemble of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs self-assembled quantum dots'. Together they form a unique fingerprint.

Cite this