Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

Chih Yuan Wu*, Bo Tsung Lin, Yu Jie Zhang, Zhi Qing Li, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3-90 K. We found that the small-energy-transfer electron-electron (e-e) scattering process dominated the dephasing from a few kelvins to several tens of kelvins. At higher temperatures, a crossover to the large-energy-transfer e-e scattering process was observed. Below about 1 to 2 K, the dephasing time τ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant D, i.e., τ (T 0.3K) 1/D. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier- concentration material is presented.

Original languageEnglish
Article number104204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number10
DOIs
StatePublished - 5 Mar 2012

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