Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix

T. C. Lin, Y. H. Wu, L. C. Li, Y. T. Sung, Sheng-Di Lin, Li Chang, Y. W. Suen, C. P. Lee

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Abstract

The magneto-optical response of type-II tensily strained GaAs self-assembled quantum dots in GaSb was investigated in magnetic fields up to 14 T. By depositing different GaAs amount, the dot sizes and the corresponding emission energies were varied. We analyzed the carrier wave function extent of different dots using the diamagnetic shift results. It was found that, with the increase in the energy (the reduction in the dot size), the diamagnetic coefficient first rises quickly and then saturates at around 21 μeV/ T 2. Based on a simple calculation model, this unusual tendency is attributed to the electrons gradually spilling out of the quantum dot to the wetting layer as the dots get smaller. This delocalization effect is enhanced in this material system due to the tensile strain relaxation within the dots, which raises the conduction band edge over that in the wetting layer.

Original languageEnglish
Article number123503
JournalJournal of Applied Physics
Volume108
Issue number12
DOIs
StatePublished - 15 Dec 2010

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