Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors

Q. Wang, Edward S. Yang, Pei-Wen Li, Z. Lu, Richard M. Osgood, Wen I. Wang

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.

Original languageEnglish
Pages (from-to)83-85
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number2
DOIs
StatePublished - 1 Jan 1992

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