Electron correlation effects in thick RuO 2 films at liquid helium temperatures

C. Y. Wu*, H. Y. Jian, S. M. Mar, Y. S. Huang, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

Original languageEnglish
Pages (from-to)784-787
Number of pages4
JournalChinese Journal of Physics
Issue number31
StatePublished - 1 Jun 1996

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