Electron correlation effects in thick RuO 2 films at liquid helium temperatures

C. Y. Wu; H. Y. Jian; S. M. Mar; Y. S. Huang; Juhn-Jong Lin

Electron correlation effects in thick RuO ₂ films at liquid helium temperatures

C. Y. Wu^*, H. Y. Jian, S. M. Mar, Y. S. Huang, Juhn-Jong Lin

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have measured the resistivities p of two ≈ 3000-Å thick RuO ₂ films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

Original language	English
Pages (from-to)	784-787
Number of pages	4
Journal	Chinese Journal of Physics
Volume	34
Issue number	31
State	Published - 1 Jun 1996

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title = "Electron correlation effects in thick RuO 2 films at liquid helium temperatures",

abstract = " We have measured the resistivities p of two ≈ 3000-{\AA} thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed. ",

author = "Wu, {C. Y.} and Jian, {H. Y.} and Mar, {S. M.} and Huang, {Y. S.} and Juhn-Jong Lin",

year = "1996",

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journal = "Chinese Journal of Physics",

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publisher = "Physical Society of the Republic of China",

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T1 - Electron correlation effects in thick RuO 2 films at liquid helium temperatures

AU - Wu, C. Y.

AU - Jian, H. Y.

AU - Mar, S. M.

AU - Huang, Y. S.

AU - Lin, Juhn-Jong

PY - 1996/6/1

Y1 - 1996/6/1

N2 - We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

AB - We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

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VL - 34

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JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

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