Abstract
We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.
Original language | English |
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Pages (from-to) | 784-787 |
Number of pages | 4 |
Journal | Chinese Journal of Physics |
Volume | 34 |
Issue number | 31 |
State | Published - 1 Jun 1996 |