Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

T. C. Chang*, Po-Tsun Liu, S. T. Yan, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Spherical and well-separated tungsten nanocrystals embedded in the SiO 2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 1011/cm2, respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 6 write/erase cycles.

Original languageEnglish
Pages (from-to)G71-G73
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume8
Issue number3
DOIs
StatePublished - 7 Apr 2005

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