Electron and hole effective g factors in InAs/GaSb quantum wells

A. Zakharova*, S. T. Yen, K. A. Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.

Original languageEnglish
Pages (from-to)437-444
Number of pages8
JournalInternational Journal of Nanoscience
Volume2
Issue number6
DOIs
StatePublished - 2003
Event11th International Symposium on Nanostructures - Physics and Technology - St Petersburg
Duration: 23 Jun 200328 Jun 2003

Keywords

  • quantum wells
  • magnetic field
  • g factor

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