Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design

Ming Hsien Lin*, Y. L. Lin, J. M. Chen, M. S. Yeh, K. P. Chang, K. C. Su, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

A significant improvement of electromigration (EM) lifetime is achieved by modification of the preclean step before cap-layer deposition and by changing Cu cap/dielectric materials. A possible mechanism for EM lifetime enhancement was proposed. Cu-silicide formation prior to cap-layer deposition and adhesion of Cu/cap interface were found to be the critical factors in controlling Cu electromigration reliability. The adhesion of the Culcap interface can be directly correlated to electromigration median-time-to-failure and activation energy. Effects of layout geometrical variation and stress current direction were also investigated.

Original languageEnglish
Pages (from-to)2602-2608
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number12
DOIs
StatePublished - 1 Dec 2005

Keywords

  • Copper electromigration (EM)
  • Cu-silicide
  • Cu/cap interface
  • Preclean treatment

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