Electromigration in Sn-Cu intermetallic compounds

C. C. Wei, C. F. Chen, P. C. Liu, Chih Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

As the shrinking in bump size continues, the effect of intermetallic compounds (IMCs) on electromigration becomes more pronounced. Electromigration in Sn-Cu intermetallic compounds was examined using edge displacement method. It was found that Cu6 Sn5 compounds are more susceptible to electromigration than Cu3 Sn compounds. The lower solidus temperature and higher resistivity of the Cu6 Sn5 IMCs are responsible for its higher electromigration rate. Length-dependent electromigration behavior was found in the stripes of various lengths and the critical length was determined to be between 5 and 10 μm at 225 °C, which corresponded to a critical product between 2.5 and 5 A/cm. Furthermore, the Sn-Cu compounds were proven to have better electromigration resistance than eutectic SnAgCu solder.

Original languageEnglish
Article number023715
JournalJournal of Applied Physics
Volume105
Issue number2
DOIs
StatePublished - 9 Feb 2009

Fingerprint Dive into the research topics of 'Electromigration in Sn-Cu intermetallic compounds'. Together they form a unique fingerprint.

  • Cite this