TY - GEN
T1 - Electromigration in flip-chip solder joints
AU - Chih, Chen
PY - 2006/1/1
Y1 - 2006/1/1
N2 - With the portable devices becoming smaller and more compact in size, flip-chip technology has been adopted for fine-pitch packaging in microelectronics industry. Area array of tiny solder joints can be fabricated on Si chips to achieve high-density packaging. In addition, as the required performance continues to increase, the input/output (I/O) pin count of flip-chip products has dramatically increased and the current that each bump needs to carry continues to increase, resulting in higher current density flowing in each solder bump. Therefore, electromigration (EM) has become an important reliability issue in solder joints. It has been reported that serious current crowding and Joule heating are responsible for the failure mechanism. In this talk, role of current crowding and Joule heating on void formation and propagation will be presented. Furthermore, the methods for relieving current crowding and Joule heating will be discussed to prolong electromigration lifetime
AB - With the portable devices becoming smaller and more compact in size, flip-chip technology has been adopted for fine-pitch packaging in microelectronics industry. Area array of tiny solder joints can be fabricated on Si chips to achieve high-density packaging. In addition, as the required performance continues to increase, the input/output (I/O) pin count of flip-chip products has dramatically increased and the current that each bump needs to carry continues to increase, resulting in higher current density flowing in each solder bump. Therefore, electromigration (EM) has become an important reliability issue in solder joints. It has been reported that serious current crowding and Joule heating are responsible for the failure mechanism. In this talk, role of current crowding and Joule heating on void formation and propagation will be presented. Furthermore, the methods for relieving current crowding and Joule heating will be discussed to prolong electromigration lifetime
UR - http://www.scopus.com/inward/record.url?scp=34547285070&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2006.306635
DO - 10.1109/ICSICT.2006.306635
M3 - Conference contribution
AN - SCOPUS:34547285070
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 2121
EP - 2124
BT - ICSICT-2006
PB - IEEE Computer Society
Y2 - 23 October 2006 through 26 October 2006
ER -