Electromigration in eutectic SnPb solder bumps with Ni/Cu UBM

Sheng Hsiang Chiu*, Shih Wei Liang, Chih Chen, S. S. Lin, C. M. Chou, Y. C. Liu, K. H. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This study investigates the electromigration behavior of eutectic SnPb solder bumps with Ni/Cu UBM, in which the thickness of the Ni and Cu layer is 3 μm and 5 μm, respectively. It was found that the SnPb solder joints have better electromigration resistance than that of SnAg bumps with thin film UBM. The thermal characteristic of SnPb solder joints under current stressing was measured by infrared technique. The Joule heating effect was less serious due to the wide Al trace of 100 μm. Besides, a three-dimensional simulation on current density distribution was performed to examine the current crowding behavior in the joint. The results show that the current crowding occurs at the entrance point of the Al trace, which caused higher formation rate of intermetallic compounds there, and thus open failure occurred.

Original languageEnglish
Title of host publicationProceedings - 2005 10th International Symposium on Advanced Packaging Materials
Subtitle of host publicationProcesses, Properties and Interfaces
Pages63-65
Number of pages3
DOIs
StatePublished - 1 Dec 2005
Event2005 10th International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces - Irvine, CA, United States
Duration: 16 Mar 200518 Mar 2005

Publication series

NameProceedings of the International Symposium and Exhibition on Advanced Packaging Materials Processes, Properties and Interfaces
Volume2005

Conference

Conference2005 10th International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces
CountryUnited States
CityIrvine, CA
Period16/03/0518/03/05

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