Electromigration in 2 mu m Redistribution Lines and Cu-Cu Bonds with Highly -oriented Nanotwinned Cu

I. Hsin Tseng, Kai Cheng Shie, Benson Tzu-Hung Lin, Chia Cheng Chang, Chih Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, we adopted highly -oriented nanotwinned Cu (nt-Cu) to fabricate 2-mu m-wide redistribution lines (RDLs) capped with polyimide and 30-um Cu-Cu direct bonds, and then measured their electromigration (EM) lifetimes. The results show that the nt-Cu RDLs possessed a higher EM lifetime than regular Cu RDL lines. Serious oxidation was observed in the Cu lines after the EM tests. For the EM in Cu-Cu bonds, the resistance Cu-Cu bumps increased less than 5% after 1000 h under 2x10(5) A/cm(2) at 150 degrees C.

Original languageEnglish
Title of host publication2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020)
PublisherIEEE COMPUTER SOC
Pages479-484
Number of pages6
ISBN (Electronic)978-1-7281-6180-8
ISBN (Print)978-1-7281-6181-5
DOIs
StatePublished - 5 Aug 2020
Event70th IEEE Electronic Components and Technology Conference (ECTC) -
Duration: 3 Jun 202030 Jun 2020

Publication series

NameElectronic Components and Technology Conference
PublisherIEEE COMPUTER SOC
ISSN (Print)0569-5503

Conference

Conference70th IEEE Electronic Components and Technology Conference (ECTC)
Period3/06/2030/06/20

Keywords

  • MAXIMUM STRENGTH
  • RELIABILITY

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