Electromigration immortality of purely intermetallic micro -bump for 3D integration

Hsiao Yun Chen, Chih Hang Tung, Yi Li Hsiao, Jyun Lin Wu, Tung Ching Yeh, Larry Liang Chen Lin, Chih Chen, Douglas Cheng Hua Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The progress of three-dimensional integrated circuit (3D IC) micro-bump joining technology has led to an increased volume fraction of intermetallics (IMC) in the post reflow joints, to an extent that a solder micro-bump may consist almost entirely of IMCs. Therefore, the current carrying capability and electromigration (EM) life time of the purely IMC micro-joint needs to be understood as functions of stressing conditions and degradation mechanisms. Superior EM performance and robustness of IMC joints is demonstrated with no resistance fluctuation under ultra-high stressing condition for over 9000 hrs while solder micro-bumps led to an open failure within 500 hrs. At least an order of magnitude greater current carrying capability of IMC micro-joint compared with solder micro-joint is observed experimentally. The observed degradation mechanism is void formation within Al trace rather than damage inside IMC joint. IMC joint is not the EM reliability bottle neck of the test circuit.

Original languageEnglish
Title of host publication2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages620-625
Number of pages6
ISBN (Electronic)9781479986095
DOIs
StatePublished - 15 Jul 2015
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 26 May 201529 May 2015

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2015-July
ISSN (Print)0569-5503

Conference

Conference2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period26/05/1529/05/15

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  • Cite this

    Chen, H. Y., Tung, C. H., Hsiao, Y. L., Wu, J. L., Yeh, T. C., Lin, L. L. C., Chen, C., & Yu, D. C. H. (2015). Electromigration immortality of purely intermetallic micro -bump for 3D integration. In 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015 (pp. 620-625). [7159656] (Proceedings - Electronic Components and Technology Conference; Vol. 2015-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159656