Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/ Cu and Ni(P)/Au metallization pads

T. L. Shao*, Y. H. Chen, S. H. Chiu, Chih Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

Different failure modes of the electromigration behavior of SnAg3.5 solder bumps were investigated under different current densities. Damage occurred in both the anode/chip side and cathode/chip side under the stressing condition of 1 × 104 A/cm2. However, under the stressing of 5 × 103 A/cm2, failure happened only in the cathode/chip side. To understand the current-crowding behavior in the solder bump, a three-dimensional simulation of the current-density distribution was performed. The temperature increase and the thermal gradients were also measured for both the current densities. The failure in the cathode/chip side was found due to the current-crowding effect.

Original languageEnglish
Pages (from-to)4518-4524
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
StatePublished - 15 Oct 2004

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