Electromigration Characteristics of TiN Barrier Layer Material

Jiang Tao, Nathan W. Cheung, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Electromigration reliability of TiN barrier layer itself has been studied. Our results show no electrically mea-surable electromigration. Resistance increase and open failure under high density current stress are apparently due to a purely thermally activated process with an activation energy of 1.5 eV. TiN resistance is projected to be stable for 10 - years if the temperature of the hottest spot in TiN is kept below 408°C, which together with electrical sheet resistance and thermal resistance determine the acceptable current density in TiN.

Original languageEnglish
Pages (from-to)230-232
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jan 1995

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