Electromigration characteristics of Al/W via contact under unidirectional and bidirectional current conditions

Jiang Tao, K. K. Young, Carey A. Pico, Nathan W. Cheung, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this study, we investigated the electromigration performances of selective CVD tungsten filled vias under DC and AC stressing current signals. Our results show that the electromigration failure always occurred in metal 2 layer at the via area. The AC lifetimes of the test structure are found to be much longer (more than 1000X) than DC lifetimes under same peak stressing current density. No obvious electromigration induced damage was observed in metal 1 in the test structure we studied.

Original languageEnglish
Title of host publication1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages390-392
Number of pages3
ISBN (Electronic)087942673X, 9780879426736
DOIs
StatePublished - 11 Jun 1991
Event8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 - Santa Clara, United States
Duration: 11 Jun 199112 Jun 1991

Publication series

Name1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

Conference

Conference8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
CountryUnited States
CitySanta Clara
Period11/06/9112/06/91

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