Electromigration and related resistance increase phenomenon on a tungsten filled via hole structure.

F. Matsuoka*, K. Hama, H. Itoh, R. Nakata, H. Iwai, K. Kanzaki

*Corresponding author for this work

Research output: Contribution to conferencePaper

4 Scopus citations

Abstract

The reliability of a via hole filling structure using selective tungsten CVD by a cold-wall reactor using WF6 and SiH4 has been studied. It has been experimentally determined that the reliability for the electromigration of a tungsten-filled via hole structure is significantly improved compared with that for a conventional non-filled via hole structure. Via hole resistance change during the electromigration test was also evaluated. A phenomenon wherein via hole resistance increases due to Si migration was found, specifically under high-temperature conditions. However, it is negligibly small for the usual operating conditions. The results are considered pertinent to the development of VLSI/ULSI devices.

Original languageEnglish
Pages491-497
Number of pages7
StatePublished - 1988

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    Matsuoka, F., Hama, K., Itoh, H., Nakata, R., Iwai, H., & Kanzaki, K. (1988). Electromigration and related resistance increase phenomenon on a tungsten filled via hole structure.. 491-497.