Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method

Jiunn Nan Hwang, Fu-Chiarng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method.

Original languageEnglish
Pages (from-to)2530-2534
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume56
Issue number11
DOIs
StatePublished - 1 Jan 2014

Keywords

  • alternating-direction implicit
  • finite-difference time-domain
  • modified conductivity profile
  • perfectly matched layer
  • stability

Fingerprint Dive into the research topics of 'Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method'. Together they form a unique fingerprint.

Cite this