Electroluminescent quantum dot light-emitting diodes with ZnO and MoO 3 carrier transport layers

Chun Yuan Huang; Ping Hua Tsai; Ying Chih Chen; Hsin-Chieh Yu; Yan Kuin Su

doi:10.4028/www.scientific.net/AMR.677.98

Electroluminescent quantum dot light-emitting diodes with ZnO and MoO ₃ carrier transport layers

Chun Yuan Huang^*, Ping Hua Tsai, Ying Chih Chen, Hsin-Chieh Yu, Yan Kuin Su

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO ₃ hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO ₃ were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs ₂ CO ₃ /QD/CBP/MoO ₃ /Au. It was found that the Cs ₂ CO ₃ played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs ₂ CO ₃ buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2 could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED's commerizing.

Original language	English
Title of host publication	Micro Nano Devices, Structure and Computing Systems II
Pages	98-102
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.677.98
State	Published - 15 Apr 2013
Event	2013 2nd International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2013 - Shenzhen, China Duration: 23 Jan 2013 → 24 Jan 2013

Publication series

Name	Advanced Materials Research
Volume	677
ISSN (Print)	1022-6680

Conference

Conference	2013 2nd International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2013
Country	China
City	Shenzhen
Period	23/01/13 → 24/01/13

Keywords

Cesium carbonate
Colloidal quantum dots
Light-emitting diodes
Sol-gel synthesis

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Cite this

@inproceedings{6b2909965f4847a5a9195cd16a1e7bb1,

title = "Electroluminescent quantum dot light-emitting diodes with ZnO and MoO 3 carrier transport layers",

abstract = " In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO 3 hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO 3 were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs 2 CO 3 /QD/CBP/MoO 3 /Au. It was found that the Cs 2 CO 3 played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs 2 CO 3 buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2 could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED's commerizing.",

keywords = "Cesium carbonate, Colloidal quantum dots, Light-emitting diodes, Sol-gel synthesis",

author = "Huang, {Chun Yuan} and Tsai, {Ping Hua} and Chen, {Ying Chih} and Hsin-Chieh Yu and Su, {Yan Kuin}",

year = "2013",

month = apr,

day = "15",

doi = "10.4028/www.scientific.net/AMR.677.98",

language = "English",

isbn = "9783037856420",

series = "Advanced Materials Research",

pages = "98--102",

booktitle = "Micro Nano Devices, Structure and Computing Systems II",

note = "null ; Conference date: 23-01-2013 Through 24-01-2013",

}

Huang, CY, Tsai, PH, Chen, YC, Yu, H-C & Su, YK 2013, Electroluminescent quantum dot light-emitting diodes with ZnO and MoO ₃ carrier transport layers. in Micro Nano Devices, Structure and Computing Systems II. Advanced Materials Research, vol. 677, pp. 98-102, 2013 2nd International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2013, Shenzhen, China, 23/01/13. https://doi.org/10.4028/www.scientific.net/AMR.677.98

Electroluminescent quantum dot light-emitting diodes with ZnO and MoO ₃ carrier transport layers. / Huang, Chun Yuan; Tsai, Ping Hua; Chen, Ying Chih; Yu, Hsin-Chieh; Su, Yan Kuin.

Micro Nano Devices, Structure and Computing Systems II. 2013. p. 98-102 (Advanced Materials Research; Vol. 677).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electroluminescent quantum dot light-emitting diodes with ZnO and MoO 3 carrier transport layers

AU - Huang, Chun Yuan

AU - Tsai, Ping Hua

AU - Chen, Ying Chih

AU - Yu, Hsin-Chieh

AU - Su, Yan Kuin

PY - 2013/4/15

Y1 - 2013/4/15

N2 - In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO 3 hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO 3 were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs 2 CO 3 /QD/CBP/MoO 3 /Au. It was found that the Cs 2 CO 3 played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs 2 CO 3 buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2 could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED's commerizing.

AB - In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO 3 hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO 3 were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs 2 CO 3 /QD/CBP/MoO 3 /Au. It was found that the Cs 2 CO 3 played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs 2 CO 3 buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2 could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED's commerizing.

KW - Cesium carbonate

KW - Colloidal quantum dots

KW - Light-emitting diodes

KW - Sol-gel synthesis

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M3 - Conference contribution

AN - SCOPUS:84876002341

SN - 9783037856420

T3 - Advanced Materials Research

SP - 98

EP - 102

BT - Micro Nano Devices, Structure and Computing Systems II

Y2 - 23 January 2013 through 24 January 2013

ER -