Electroluminescent quantum dot light-emitting diodes with ZnO and MoO 3 carrier transport layers

Chun Yuan Huang*, Ping Hua Tsai, Ying Chih Chen, Hsin-Chieh Yu, Yan Kuin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO 3 hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO 3 were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs 2 CO 3 /QD/CBP/MoO 3 /Au. It was found that the Cs 2 CO 3 played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs 2 CO 3 buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2 could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED's commerizing.

Original languageEnglish
Title of host publicationMicro Nano Devices, Structure and Computing Systems II
Pages98-102
Number of pages5
DOIs
StatePublished - 15 Apr 2013
Event2013 2nd International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2013 - Shenzhen, China
Duration: 23 Jan 201324 Jan 2013

Publication series

NameAdvanced Materials Research
Volume677
ISSN (Print)1022-6680

Conference

Conference2013 2nd International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2013
CountryChina
CityShenzhen
Period23/01/1324/01/13

Keywords

  • Cesium carbonate
  • Colloidal quantum dots
  • Light-emitting diodes
  • Sol-gel synthesis

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