Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu, Yew-Chuhg Wu*, Chi Wei Chao, Tian Jiun Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

Original languageEnglish
Pages (from-to)6356-6357
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number11A
DOIs
StatePublished - 1 Nov 2002

Keywords

  • Amorphous silicon
  • Electroless plating
  • Metal-induced-crystallization
  • Polycrystalline silicon
  • Thin film transistor

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