A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 1 Nov 2002|
- Amorphous silicon
- Electroless plating
- Polycrystalline silicon
- Thin film transistor